English
简体中文
RES 2.32K OHM 1/8W .1% AXIAL
SWITCH SNAP ACTION SPDT 10A 125V
MOSFET N-CH 250V 2.3A PPAK SO-8
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 155mOhm @ 3.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.9W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT20M11JVRRoving Networks / Microchip Technology |
MOSFET N-CH 200V 175A ISOTOP |
|
TSM7N90CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 900V 7A TO220 |
|
IPB60R250CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM80N30LDRectron USA |
MOSFET N-CHANNEL 30V 80A TO252-2 |
|
YJQ35N04A-F1-1100HF |
N-CH MOSFET 40V 35A DFN3333-8L |
|
TP2640LG-GRoving Networks / Microchip Technology |
MOSFET P-CH 400V 86MA 8SOIC |
|
IPW65R145CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17A TO247-3 |
|
FQI9N25CTURochester Electronics |
MOSFET N-CH 250V 8.8A I2PAK |
|
NTJS4405NT4GRochester Electronics |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
BSC010N04LS6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A/100A TDSON |
|
FKP250ASanken Electric Co., Ltd. |
MOSFET N-CH 250V 50A TO3P |
|
FDB9403L-F085Rochester Electronics |
MOSFET N-CH 40V 110A D2PAK |
|
TK4R4P06PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 60V 58A DPAK |