类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 35A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1500 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 4.1W (Ta), 40W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (3.3x3.3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
TP2640LG-GRoving Networks / Microchip Technology |
MOSFET P-CH 400V 86MA 8SOIC |
![]() |
IPW65R145CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17A TO247-3 |
![]() |
FQI9N25CTURochester Electronics |
MOSFET N-CH 250V 8.8A I2PAK |
![]() |
NTJS4405NT4GRochester Electronics |
MOSFET N-CH 25V 1A SC88/SC70-6 |
![]() |
BSC010N04LS6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A/100A TDSON |
![]() |
FKP250ASanken Electric Co., Ltd. |
MOSFET N-CH 250V 50A TO3P |
![]() |
FDB9403L-F085Rochester Electronics |
MOSFET N-CH 40V 110A D2PAK |
![]() |
TK4R4P06PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 60V 58A DPAK |
![]() |
SQD10N30-330H_GE3Vishay / Siliconix |
MOSFET N-CH 300V 10A TO252AA |
![]() |
IPB60R125CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 25A TO263-3 |
![]() |
SI7852ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
![]() |
IRLR120Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
![]() |
IRFR7746PBF-INFRochester Electronics |
MOSFET N-CH 75V 56A DPAK |