类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 140mOhm @ 14A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2700 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQPF47P06YDTURochester Electronics |
MOSFET P-CH 60V 30A TO220F-3 |
|
IXTA90N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 90A TO263 |
|
SPP73N03S2L-08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPZ60R099P6FKSA1Rochester Electronics |
PFET, 600V, 0.099OHM, 1-ELEMENT, |
|
RCJ450N20TLROHM Semiconductor |
MOSFET N-CH 200V 45A LPTS |
|
TP0610K-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 185MA SOT23-3 |
|
STH170N8F7-2STMicroelectronics |
MOSFET N-CH 80V 120A H2PAK-2 |
|
RF1S9640SM9ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMT6013LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10A 6UDFN |
|
ZXMP7A17KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 3.8A TO252-3 |
|
IPA65R660CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220 |
|
PHB110NQ08T,118Rochester Electronics |
MOSFET N-CH 75V 75A D2PAK |
|
IPI50R299CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 12A TO262-3 |