English
简体中文
MOSFET N-CH 100V 120A D2PAK
M12-4P(D)-FE-ST/RJ45-M-1M-PUR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 2mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 270µA |
| 栅极电荷 (qg) (max) @ vgs: | 210 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 15600 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2323DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A SOT-23 |
|
SSM3J133TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A UFM |
|
SI3442DVRochester Electronics |
MOSFET N-CH 20V 4.1A SUPERSOT6 |
|
SI7322DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK 1212-8 |
|
NTHS5441T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |
|
AOD4189Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 40A TO252 |
|
IRF640PBFVishay / Siliconix |
MOSFET N-CH 200V 18A TO220AB |
|
IPW60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A TO247-3 |
|
DMT35M7LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 76A POWERDI3333 |
|
STP25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220 |
|
BSS192PE6327Rochester Electronics |
MOSFET P-CH 250V 190MA SOT89 |
|
FQP33N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A TO220-3 |
|
STL9N65M2STMicroelectronics |
MOSFET N-CH 650V POWERFLAT 5X5 H |