类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9D23-40EXNexperia |
MOSFET N-CH 40V 8A DFN2020MD-6 |
|
IPDD60R102G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23A HDSOP-10 |
|
PSMN8R0-40PS,127Nexperia |
MOSFET N-CH 40V 77A TO220AB |
|
FCA35N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 35A TO3PN |
|
STFI4N62K3STMicroelectronics |
MOSFET N CH 620V 3.8A I2PAKFP |
|
SI4842BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 28A 8SO |
|
SI7322DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK1212-8 |
|
MTB10N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOB66613LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 44.5A/120A TO263 |
|
IMBG120R220M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 13A TO263 |
|
IXFP34N65X2MWickmann / Littelfuse |
MOSFET N-CH 650V 34A TO220 |
|
SI7415DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 3.6A PPAK1212-8 |
|
IPP60R165CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO220-3 |