English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 900mOhm @ 2.7A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 430 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 70W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
2N7002KW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-323 |
|
FQAF44N10Rochester Electronics |
MOSFET N-CH 100V 33A TO3PF |
|
FDS6299SRochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
TK6P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.8A DPAK |
|
NTB6411ANGRochester Electronics |
MOSFET N-CH 100V 77A D2PAK |
|
SI5419DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |
|
SQJ486EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 75V 30A PPAK SO-8 |
|
2SK4096LSRochester Electronics |
MOSFET N-CH 500V 7.1A TO220FI |
|
2SK3299B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7655DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |
|
AUIRL1404ZLRochester Electronics |
MOSFET N-CH 40V 160A TO262 |
|
SI8457DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 12V 4MICRO FOOT |
