English
简体中文
TVS DIODE 26V 42.1V TO277A
MOSFET N-CH 100V 56A D2PAK
SMA-SJB/MMCX-SP G316 18I
TEST LEAD BANANA TO BANANA 8"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 56A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SFS9Z14Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDMS7676Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
AUIRFS3107TRLIR (Infineon Technologies) |
MOSFET N-CH 75V 195A D2PAK |
|
2SJ330-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
RF1K4915796Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PH3120L,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SFU9220TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7M21-40EXNexperia |
MOSFET N-CH 40V 33A LFPAK33 |
|
MTP75N03HDLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT10021JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 37A ISOTOP |
|
NVMFS5C456NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/87A 5DFN |
|
IRFH5302TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A/100A PQFN |
|
TSM120N06LCS RLGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 23A 8SOP |