MOSFET FIELD EFFECT 8DFN DL
SSR RELAY SPST-NO 1A 0-400V
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM6H19NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 2A 6UDFN |
|
IPD50R380CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 14.1A TO252-3 |
|
IRLZ14STRLPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
PMN40ENAXNexperia |
MOSFET N-CH 60V 4.2A 6TSOP |
|
BSZ180P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 9A/39.6A TSDSON |
|
5LP01M-TL-HRochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IRFR214TRLPBFVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
PSMN1R9-40PLQNexperia |
MOSFET N-CH 40V 150A TO220AB |
|
FDB024N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
NTP4302GRochester Electronics |
MOSFET N-CH 30V 74A TO220AB |
|
AO4449Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 7A 8SOIC |
|
BSO201SPHXUMA1IR (Infineon Technologies) |
MOSFET P-CH 20V 12A 8DSO |
|
SQM40014EM_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A TO263-7 |