类型 | 描述 |
---|---|
系列: | TrenchFET® Gen III |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 500mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 1.573Ohm @ 200mA, 10V |
vgs(th) (最大值) @ id: | 1.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2 nC @ 10 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 33 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 0806 |
包/箱: | PowerPAK® 0806 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFN300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A SOT227B |
|
2SK1838L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIZ14GPBFVishay / Siliconix |
MOSFET N-CH 60V 8A TO220-3 |
|
SI7634BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RFD14N05SMRochester Electronics |
MOSFET N-CH 50V 14A TO252AA |
|
IPB160N08S4-03ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 15A ISOPLUS247 |
|
IXTT82N25PWickmann / Littelfuse |
MOSFET N-CH 250V 82A TO268 |
|
SSM5H90ATU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 2.4A UFV |
|
IRFZ48SPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
FDB603ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
ISL9N312AD3STNLRochester Electronics |
MOSFET N-CH 30V 50A TO252AA |