English
简体中文
FIXED IND 10UH 1.21A 250 MOHM
TRANSFORMERS
MOSFET N-CH 900V 4.1A TO220FI
3 DB SMT FIXED ATTENUATOR, DC -
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.7Ohm @ 3.25A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 850 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 37W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FI(LS) |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A DPAK |
|
PMV30XN,215Rochester Electronics |
MOSFET N-CH 20V 3.2A TO236AB |
|
RM8N650HDRectron USA |
MOSFET N-CHANNEL 650V 8A TO263-2 |
|
IPD85P04P4L06ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
|
SQD40061EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 100A TO252AA |
|
APT8030JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 800V 25A ISOTOP |
|
NVBG020N090SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 900V 9.8A/112A D2PAK |
|
BSZ120P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 11A/40A 8TSDSON |
|
2SK3140-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC2523PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3A 8MLP |
|
STW15N95K5STMicroelectronics |
MOSFET N-CH 950V 12A TO247 |
|
SQM90142E_GE3Vishay / Siliconix |
MOSFET N-CH 200V 95A TO263 |
|
TPCA8057-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 42A 8SOP |