







SICFET N-CH 900V 9.8A/112A D2PAK
COMP O= .281,L= 1.19,W= .036
APPL HB*CQM* 8EAPR140T140O G
MODEM V.92 VOICE/DATA/FAX PCI
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.8A (Ta), 112A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 15V |
| rds on (max) @ id, vgs: | 28mOhm @ 60A, 15V |
| vgs(th) (最大值) @ id: | 4.3V @ 20mA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 15 V |
| vgs (最大值): | +19V, -10V |
| 输入电容 (ciss) (max) @ vds: | 4415 pF @ 450 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.7W (Ta), 477W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSZ120P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 11A/40A 8TSDSON |
|
|
2SK3140-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FDMC2523PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3A 8MLP |
|
|
STW15N95K5STMicroelectronics |
MOSFET N-CH 950V 12A TO247 |
|
|
SQM90142E_GE3Vishay / Siliconix |
MOSFET N-CH 200V 95A TO263 |
|
|
TPCA8057-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 42A 8SOP |
|
|
NTD23N03R-001Rochester Electronics |
MOSFET N-CH 25V 3.8A IPAK |
|
|
STD20NF06LAGSTMicroelectronics |
MOSFET N-CHANNEL 60V 24A DPAK |
|
|
TBB1002BMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
|
VN2460N3-G-P014Roving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
|
SIRC04DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
|
BSC014N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A/100A TDSON7 |
|
|
TSM60N900CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4.5A TO252 |