English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 940mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 827 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 31W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO7417Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.9A SC70-6 |
|
STP85NF55STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
SPB04N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 4.5A TO263-3-2 |
|
BSO612CVGRochester Electronics |
BSO612 - 20V-60V COMPLEMENTARY M |
|
2SK1971-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NX7002AK,215Nexperia |
MOSFET N-CH 60V 190MA TO236AB |
|
C2M0025120DWolfspeed - a Cree company |
SICFET N-CH 1200V 90A TO247-3 |
|
FQH90N10V2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF3N50NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3A TO220F |
|
BUK9Y15-100E,115Nexperia |
MOSFET N-CH 100V 69A LFPAK56 |
|
IXFN52N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 44A SOT227B |
|
SI2328DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.15A SOT23-3 |
|
IPI075N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
