类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STN4NF20LSTMicroelectronics |
MOSFET N-CH 200V 1A SOT-223 |
|
SSW7N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLL014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
NTTFS4C50NTAGRochester Electronics |
MOSFET N-CH 30V 75A 8WDFN |
|
NTHL190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO247-3 |
|
SIHP125N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO220AB |
|
RCX081N20ROHM Semiconductor |
MOSFET N-CH 200V 8A TO220FM |
|
TSM60NB260CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 13A ITO220AB |
|
STH290N4F6-6AGSTMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-6 |
|
IRF9620PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 3.5A TO220AB |
|
IAUC100N08S5N031ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON-8-34 |
|
DN3135N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 135MA TO243AA |
|
SSR2N60BTFRochester Electronics |
N-CHANNEL POWER MOSFET |