类型 | 描述 |
---|---|
系列: | FRFET®, SuperFET® III |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 5V @ 430µA |
栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1610 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 162W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHP125N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO220AB |
|
RCX081N20ROHM Semiconductor |
MOSFET N-CH 200V 8A TO220FM |
|
TSM60NB260CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 13A ITO220AB |
|
STH290N4F6-6AGSTMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-6 |
|
IRF9620PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 3.5A TO220AB |
|
IAUC100N08S5N031ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON-8-34 |
|
DN3135N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 135MA TO243AA |
|
SSR2N60BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF11N60DM2STMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
DMTH4004SCTBQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO263AB |
|
IXFH340N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 340A TO247AD |
|
IPZ60R070P6FKSA1Rochester Electronics |
PFET, 600V, 0.07OHM, 1-ELEMENT, |
|
PSMN2R2-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |