English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 585mOhm @ 4.5A, 15V |
| vgs(th) (最大值) @ id: | 7V @ 1.38mA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 15 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 645 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP10N80K5STMicroelectronics |
MOSFET N-CH 800V 9A TO220 |
|
IPP60R250CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO220-3 |
|
RSH090N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 9A SOP8 |
|
UJ3C065080T3SUnitedSiC |
MOSFET N-CH 650V 31A TO220-3 |
|
NTMS4N01R2GRochester Electronics |
MOSFET N-CH 20V 3.3A 8SOIC |
|
SI4825DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 14.9A 8SO |
|
BUK724R5-30C118Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STS6P3LLH6STMicroelectronics |
MOSFET P-CH 30V 6A 8SO |
|
IXFX180N25TWickmann / Littelfuse |
MOSFET N-CH 250V 180A PLUS247-3 |
|
STB80NF55-06-1STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
|
SI4434ADY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 2.8A/4.1A 8SO |
|
NVMFS5C410NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
RM11N800T2Rectron USA |
MOSFET N-CH 800V 11A TO220-3 |
