类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STL8NH3LLSTMicroelectronics |
MOSFET N-CH 30V 8A POWERFLAT |
|
IPB200N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM085P03CV RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 64A 8PDFN |
|
IRFZ44NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
|
FDD3570Rochester Electronics |
MOSFET N-CH 80V 10A TO252 |
|
NTLJS5D0N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.2A 6PQFN |
|
RSD080N06TLROHM Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
|
IXFK300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A TO264 |
|
BUZ73ALHXKSA1Rochester Electronics |
MOSFET N-CH 200V 5.5A TO220-3 |
|
IRF710STRLPBFVishay / Siliconix |
MOSFET N-CH 400V 2A D2PAK |
|
SPW24N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24.3A TO247-3 |
|
DMN4800LSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.6A 8SO |
|
RJK0701DPN-E0#T2Rochester Electronics |
MOSFET N-CH 75V 100A TO220AB |