English
简体中文
RES 200K OHM 1% 1/4W 1206
RES 210K OHM 0.5% 1/8W 0805
RES SMD 5.23KOHM 0.25% 1/4W 1210
MOSFET P-CH 20V 13.5A 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 13.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 8237 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 15A D2PAK |
|
STL90N3LLH6STMicroelectronics |
MOSFET N-CH 30V 90A POWERFLAT |
|
TBB1005EMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
FQPF7N20Rochester Electronics |
MOSFET N-CH 200V 4.8A TO220F |
|
CSD25480F3Texas Instruments |
MOSFET P-CH 20V 1.7A 3PICOSTAR |
|
SQJ416EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 27A PPAK SO-8 |
|
IRFS3107TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 75V 240A D2PAK |
|
AUIRFSL4310Rochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPSA70R750P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO251-3 |
|
TSM2N7000KCT B0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 300MA TO92 |
|
IPP60R180P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO220-3 |
|
STB10LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 8A D2PAK |
|
PMN50UPE,115Rochester Electronics |
MOSFET P-CH 20V 3.6A 6TSOP |