类型 | 描述 |
---|---|
系列: | MDmesh™ V |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 27A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 98mOhm @ 13.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 83 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 3750 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 160W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB033N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
IRFH8321TRPBFRochester Electronics |
IRFH8321 - HEXFET POWER MOSFET |
|
IXTH96N20PWickmann / Littelfuse |
MOSFET N-CH 200V 96A TO247 |
|
TK19A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 19A TO220SIS |
|
IPB65R045C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 46A TO263-3 |
|
IPI072N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO262-3 |
|
RT1E040RPTRROHM Semiconductor |
MOSFET P-CH 30V 4A 8TSST |
|
TSM126CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 30MA SOT23 |
|
SI9424DYRochester Electronics |
MOSFET P-CH 20V 8A 8SOIC |
|
IPU80R1K4CEBKMA1Rochester Electronics |
MOSFET N-CH 800V 3.9A TO251-3 |
|
TSM70N600CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 8A TO251 |
|
AO3413Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 3A SOT23-3L |
|
BSC350N20NSFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 35A TDSON-8-1 |