English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 7.2mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 90µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4910 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RT1E040RPTRROHM Semiconductor |
MOSFET P-CH 30V 4A 8TSST |
|
TSM126CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 30MA SOT23 |
|
SI9424DYRochester Electronics |
MOSFET P-CH 20V 8A 8SOIC |
|
IPU80R1K4CEBKMA1Rochester Electronics |
MOSFET N-CH 800V 3.9A TO251-3 |
|
TSM70N600CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 8A TO251 |
|
AO3413Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 3A SOT23-3L |
|
BSC350N20NSFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 35A TDSON-8-1 |
|
NTD20N06L-001Rochester Electronics |
MOSFET N-CH 60V 20A IPAK |
|
IPI80N06S4L05AKSA1Rochester Electronics |
MOSFET N-CH 60V 80A TO262-3 |
|
PSMN7R8-120ESQRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 7 |
|
IRLU014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
SQM50N04-4M1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO263 |
|
IRLIZ34GPBFVishay / Siliconix |
MOSFET N-CH 60V 20A TO220-3 |
