English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 50mOhm @ 12A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 1600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 42W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT2004UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 14.1A 6UDFN |
|
IPL60R105P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A 4VSON |
|
NTD110N02R-001GRochester Electronics |
MOSFET N-CH 24V 12.5A/110A IPAK |
|
BSB014N04LX3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 36A/180A 2WDSON |
|
SIHP4N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 4.3A TO220AB |
|
FDMS86202Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 13.5A POWER56 |
|
NVD6416ANLT4GRochester Electronics |
19A, 100V, 0.074OHM, N-CHANNEL, |
|
2SK4089LSRochester Electronics |
MOSFET N-CH 650V 8.5A TO220FI |
|
DMT10H014LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 8.9A 8SO |
|
HUF75329S3Rochester Electronics |
MOSFET N-CH 55V 49A D2PAK |
|
NTD5802NT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IPB65R310CFDAATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A D2PAK |
|
FDMS4D0N12CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 18.5A/114A 8QFN |
