English
简体中文
MOSFET N-CH 800V 2.5A POWERFLAT
SWITCH SLIDE DP4T 300MA 125V
TRANS 2PNP PREBIAS 0.3W MINI6
IC AMP BLU TH 100MHZ-3GHZ SOT343
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH5™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.5Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 175 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD95R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A TO252-3 |
|
CPH6341-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5A 6CPH |
|
IPI80N06S3L-08Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
STD3NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 2.4A DPAK |
|
NX7002BKRNexperia |
MOSFET N-CH 60V 270MA TO236AB |
|
HUF75339P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
IPD50R399CPATMA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
PSMN1R5-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
NTB75N06GRochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
|
CSD17301Q5ATexas Instruments |
MOSFET N-CH 30V 28A/100A 8VSON |
|
IRFU310PBFVishay / Siliconix |
MOSFET N-CH 400V 1.7A TO251AA |
|
BSC014N03MSGATMA1Rochester Electronics |
PFET, 30A I(D), 30V, 0.00175OHM, |
|
STP2NK90ZSTMicroelectronics |
MOSFET N-CH 900V 2.1A TO220AB |