English
简体中文
MOSFET N-CH 100V PWRDI3333
DIODE SCHOTTKY 1.5A 90V DO-214AA
DIODE GEN PURP 200V 1.5A SMB
P51-500-S-U-M12-4.5OVP-000-000
SENSOR 500PSI 7/16-20-2B .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta), 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1871 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 35W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB108N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 83A D2PAK |
|
STD35NF06T4STMicroelectronics |
MOSFET N-CH 60V 35A DPAK |
|
MSJW20N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH TO247 |
|
IRFHS9301TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 6A/13A 6PQFN |
|
IXFP36N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 36A TO220AB |
|
IPI90R1K2C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO262-3 |
|
IRFF213Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC86340Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14A/48A POWER33 |
|
RQ7E055ATTCRROHM Semiconductor |
MOSFET P-CH 30V 5.5A TSMT8 |
|
FDMS2504SDCRochester Electronics |
MOSFET N-CH 25V 42A/49A DLCOOL56 |
|
FDP8442-F085Rochester Electronics |
23A, 40V, 0.0031OHM, N-CHANNEL, |
|
SI1443EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 4A/4A SC70-6 |
|
IMW65R072M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |