类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 54A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 100mOhm @ 27A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 6710 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-264 [L] |
包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD25501F3TTexas Instruments |
MOSFET P-CH 20V 3.6A 3LGA |
|
SQD25N06-22L_T4GE3Vishay / Siliconix |
MOSFET N-CH 60V 25A TO252AA |
|
DMTH3004LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A PWRDI3333 |
|
IRF7201PBFRochester Electronics |
HEXFET POWER MOSFET |
|
ZVNL120GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 320MA SOT223 |
|
DMTH6004SCTBQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO263AB |
|
FCA47N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO3PN |
|
XP162A12A6PR-GTorex Semiconductor Ltd. |
MOSFET P-CH 20V 2.5A SOT89 |
|
AOT9N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 9A TO220 |
|
SI4838DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 12V 17A 8SO |
|
IPB020N04NGATMA1Rochester Electronics |
MOSFET N-CH 40V 140A TO263-7-3 |
|
IXTA130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO263AA |
|
AUIRF4905LRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |