MOSFET P-CH 100V 38A D2PAK
DIODE ZENER 47V 5W DO35
TERM BLK 10P SIDE ENT 5.08MM PCB
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 38A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 60mOhm @ 38A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 230 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2780 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 170W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SPD07N60S5Rochester Electronics |
MOSFET N-CH 600V 7.3A TO252-3 |
|
ZXMN6A08GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
ATP201-V-TL-HRochester Electronics |
N-CHANNEL MOSFET |
|
HUF76619D3STRochester Electronics |
MOSFET N-CH 100V 18A TO252AA |
|
IXFA72N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 72A TO263AA |
|
CSD16301Q2Texas Instruments |
MOSFET N-CH 25V 5A 6SON |
|
STP11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |
|
BSC0502NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 26A/100A TDSON |
|
IXFP12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO220AB |
|
IPP086N10N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN4R0-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
SI7788DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
NTA4151PT1HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 760MA SC75 |