类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.15V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 36.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2090 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 69W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7788DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
NTA4151PT1HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 760MA SC75 |
|
APT6038BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 17A TO247 |
|
IPW60R060C7Rochester Electronics |
IPW60R060 - 600V COOLMOS N-CHANN |
|
SSM3J140TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4.4A UFM |
|
IPD5N25S3430ATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 5A TO252-3 |
|
FQD1N50TMRochester Electronics |
MOSFET N-CH 500V 1.1A DPAK |
|
2SK3702Rochester Electronics |
FOR 60V MOTOR DRIVERS |
|
NTMFS5C404NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
SIHG70N60AEF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 60A TO247AC |
|
DMT6017LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.2A 8SO |
|
DMTH6010SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
PMZB390UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006B-3 |