类型 | 描述 |
---|---|
系列: | SuperMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 10.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 299mOhm @ 5.4A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 35.6 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1505 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 32.1W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPA65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL34N65M5STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
|
APT5010LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
|
FK6K02010LPanasonic |
MOSFET N-CH 20V 4.5A WSMINI6 |
|
BSO203SPNTRochester Electronics |
P-CHANNEL POWER MOSFET |
|
TK17E65W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 17.3A TO220 |
|
IPU60R2K0C6BKMA1Rochester Electronics |
MOSFET N-CH 600V 2.4A TO251-3 |
|
IPAN70R750P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO220 |
|
IRF3710STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A D2PAK |
|
PMZ370UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006-3 |
|
TK46E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 80A TO220 |
|
STB16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
PSMN027-100BS,118Nexperia |
MOSFET N-CH 100V 37A D2PAK |