English
简体中文
MEMS OSC XO 14.0000MHZ H/LV-CMOS
MOSFET N-CH 100V 57A D2PAK
DIODE GEN PURP 600V 15A D-PAK
SENSOR 1500PSI M10-1.25 6H 20MA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 57A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3130 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMZ370UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006-3 |
|
TK46E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 80A TO220 |
|
STB16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
PSMN027-100BS,118Nexperia |
MOSFET N-CH 100V 37A D2PAK |
|
NTMFS4H02NT1GRochester Electronics |
MOSFET N-CH 25V 37A/193A 5DFN |
|
AUIRF9540NRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
FDMS6673BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 15.2A/28A 8PQFN |
|
IXFK240N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 240A TO264AA |
|
RTR025N03TLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
|
AONS66966Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 31.3A/100A 8DFN |
|
IRFBC40PBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IRFR540ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 35A DPAK |
|
DMT3009LFVWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |