







 
                            CRYSTAL 10.0000MHZ 8PF SMD
 
                            WR COMB INDEX 14MM
 
                            N-CHANNEL POWER MOSFET
 
                            CLAMPING STAR KNOB 1.570 IN DIAM
| 类型 | 描述 | 
|---|---|
| 系列: | * | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 场效应管类型: | - | 
| 技术: | - | 
| 漏源电压 (vdss): | - | 
| 电流 - 连续漏极 (id) @ 25°c: | - | 
| 驱动电压(最大 rds on,最小 rds on): | - | 
| rds on (max) @ id, vgs: | - | 
| vgs(th) (最大值) @ id: | - | 
| 栅极电荷 (qg) (max) @ vgs: | - | 
| vgs (最大值): | - | 
| 输入电容 (ciss) (max) @ vds: | - | 
| 场效应管特征: | - | 
| 功耗(最大值): | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 供应商设备包: | - | 
| 包/箱: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | NTMFS4C10NT1G-001Rochester Electronics | MOSFET N-CH 30V 8.2A/46A 5DFN | 
|   | APT5010JLLU3Roving Networks / Microchip Technology | MOSFET N-CH 500V 41A SOT227 | 
|   | IRF9230Rochester Electronics | 200V, P-CHANNEL REPETITIVE AVALA | 
|   | AUIRLR3110ZRochester Electronics | MOSFET N-CH 100V 42A DPAK | 
|   | STD11N65M5STMicroelectronics | MOSFET N CH 650V 9A DPAK | 
|   | SIHH21N65EF-T1-GE3Vishay / Siliconix | MOSFET N-CH 650V 19.8A PPAK 8X8 | 
|   | SI1302DL-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 600MA SC70-3 | 
|   | IRFR310TRPBFVishay / Siliconix | MOSFET N-CH 400V 1.7A DPAK | 
|   | APT36N90BC3GMicrosemi | MOSFET N-CH 900V 36A TO247 | 
|   | STU6NF10STMicroelectronics | MOSFET N-CH 100V 6A IPAK | 
|   | CSD17581Q3ATTexas Instruments | MOSFET N-CH 30V 60A 8VSON | 
|   | DMN601WKQ-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 60V SOT323 | 
|   | IPD70N12S3L12ATMA1IR (Infineon Technologies) | MOSFET N-CHANNEL_100+ |