English
简体中文
MOSFET N-CH 650V 46A TO247
DIODE SCHOTTKY 30V 1A SOD123HE
N-SJB/N-RP G316 0.5M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 46A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 45mOhm @ 24.9A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1.25mA |
| 栅极电荷 (qg) (max) @ vgs: | 93 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4340 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 227W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO247 |
| 包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6015ENXROHM Semiconductor |
MOSFET N-CH 600V 15A TO220FM |
|
AUIRF1404ZSRochester Electronics |
MOSFET N-CH 40V 160A D2PAK |
|
IRF6623IR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
BUK765R3-40E,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IXFN66N85XWickmann / Littelfuse |
MOSFET N-CH 850V 65A SOT227B |
|
FDB13AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.9A/62A D2PAK |
|
NTP27N06LRochester Electronics |
MOSFET N-CH 60V 27A TO220AB |
|
BFL4007-1ERochester Electronics |
MOSFET N-CH 600V 8.7A TO220F-3FS |
|
STU7NF25STMicroelectronics |
MOSFET N-CH 250V 8A IPAK |
|
STP19NF20STMicroelectronics |
MOSFET N-CH 200V 15A TO220AB |
|
APT8065BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
IRL540PBFVishay / Siliconix |
MOSFET N-CH 100V 28A TO220AB |
|
IXFN120N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 108A SOT227B |