English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 74A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 7.2mOhm @ 37A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 36µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2100 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 69W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8-7 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB33N60DM2STMicroelectronics |
MOSFET N-CH 600V 24A D2PAK |
|
FDS6630ARochester Electronics |
MOSFET N-CH 30V 6.5A 8SOIC |
|
RS1E280BNTBROHM Semiconductor |
MOSFET N-CH 30V 28A 8HSOP |
|
DMNH6021SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 55A PWRDI5060-8 |
|
DMTH61M8LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 225A PWRDI |
|
LP0701LG-GRoving Networks / Microchip Technology |
MOSFET P-CH 16.5V 700MA 8SOIC |
|
SQS460EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 8A PPAK1212-8 |
|
FQP27N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 25.5A TO220-3 |
|
TSM9N90ECZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 900V 9A TO220 |
|
TK7Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7A IPAK |
|
IRLR8256TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 81A DPAK |
|
TK3R1P04PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 40V 58A DPAK |
|
R8010ANXROHM Semiconductor |
MOSFET N-CH 800V 10A TO220FM |
