English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 300mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.7 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Isolated Tab |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
X97813760Rochester Electronics |
SMALL SIGNAL MOSFET |
|
NTD5C446NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A DPAK |
|
RMD1N25ES9Rectron USA |
MOSFET N-CHANNEL 25V 1.1A SOT363 |
|
ATP206-TL-HRochester Electronics |
MOSFET N-CH 40V 40A DPAK/ATPAK |
|
APT84F50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 84A TO264 |
|
NTMS4N01R2Rochester Electronics |
MOSFET N-CH 20V 3.3A 8SOIC |
|
BSZ014NE2LS5IFATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 31A/40A TSDSON |
|
PSMN2R7-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
2SK4196LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMP21D6UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 580MA 3DFN |
|
SIDR622DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 64.6A PPAK |
|
IRFRC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
2V7002LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT23-3 |
