English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 600mOhm @ 500mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 30 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 800mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-363 |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ATP206-TL-HRochester Electronics |
MOSFET N-CH 40V 40A DPAK/ATPAK |
|
APT84F50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 84A TO264 |
|
NTMS4N01R2Rochester Electronics |
MOSFET N-CH 20V 3.3A 8SOIC |
|
BSZ014NE2LS5IFATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 31A/40A TSDSON |
|
PSMN2R7-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
2SK4196LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMP21D6UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 580MA 3DFN |
|
SIDR622DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 64.6A PPAK |
|
IRFRC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
2V7002LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SI7423DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 7.4A PPAK1212-8 |
|
FQB20N06LTMRochester Electronics |
MOSFET N-CH 60V 21A D2PAK |
|
TPH1R306P1,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
