ICL 30 OHM 20% 5A 22MM
MOSFET N-CH 40V 120A TO220AB
类型 | 描述 |
---|---|
系列: | HEXFET®, StrongIRFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2.5mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4730 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 143W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STW26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
|
IRLU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A IPAK |
|
SPP80N03S2L-06Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
STP35N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V TO220 |
|
STF13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
CPH3351-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
HUFA75344S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
IPP12CN10LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 69A TO220-3 |
|
FDS6672ARochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
BSC046N02KSGAUMA1IR (Infineon Technologies) |
MOSFET N-CH 20V 19A/80A TDSON |
|
IPL60R255P6AUMA1Rochester Electronics |
MOSFET N-CH 600V 15.9A 4VSON |
|
BSC060P03NS3EGATMA1Rochester Electronics |
BSC060P03 - 20V-250V P-CHANNEL P |
|
NTE2386NTE Electronics, Inc. |
MOSFET N-CHANNEL 600V 6.2A TO3 |