English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42.8A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 1.7mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 102 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5130 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.25W (Ta), 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8DC |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUZ101LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN6140LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
IRLM220ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 1.13A SOT223-4 |
|
FDWS9508L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 80A 8PQFN |
|
IXTT96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO268 |
|
AO5404EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 500MA SC89-3 |
|
SIA441DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 12A PPAK SC70-6 |
|
BUK968R3-40E,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IPA60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A TO220 |
|
IAUC100N08S5N043ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A 8TDSON-34 |
|
FDMS86250Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 6.7A/20A 8PQFN |
|
STB80NF03L-04T4STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
|
IRF6811STRPBFRochester Electronics |
MOSFET N-CH 25V 19A/74A DIRECTFT |
