类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 47mOhm @ 4.4A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 890 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 19W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SC-70-6 Single |
包/箱: | PowerPAK® SC-70-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK968R3-40E,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IPA60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A TO220 |
|
IAUC100N08S5N043ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A 8TDSON-34 |
|
FDMS86250Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 6.7A/20A 8PQFN |
|
STB80NF03L-04T4STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
|
IRF6811STRPBFRochester Electronics |
MOSFET N-CH 25V 19A/74A DIRECTFT |
|
TK10P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 9.7A DPAK |
|
IRF730ASTRLPBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
|
CDM2208-800FP SL PBFREECentral Semiconductor |
MOSFET N-CH 800V 8A TO220FP |
|
IPB70N04S406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF8N50NZFRochester Electronics |
MOSFET N-CH 500V 7A TO220F |
|
BSC034N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 19A/100A TDSON |
|
RF6E065BNTCRROHM Semiconductor |
MOSFET N-CH 30V 6.5A TUMT6 |