English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 240 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMZ550UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
HUF75823D3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC007N08LCDCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 64A 8PQFN |
|
FQD4N50TMRochester Electronics |
MOSFET N-CH 500V 2.6A DPAK |
|
STP15NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO220AB |
|
SIR880DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
STP100NF04STMicroelectronics |
MOSFET N-CH 40V 120A TO220AB |
|
RQ5E040RPTLROHM Semiconductor |
MOSFET P-CH 30V 4A TSMT3 |
|
DMN2011UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 21A 8TSSOP |
|
IRF7807ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
|
HUFA76609D3STRochester Electronics |
MOSFET N-CH 100V 10A TO252AA |
|
IPD068P03L3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 70A TO252-3 |
|
IAUT300N10S5N015ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 300A 8HSOF |
