类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 55mOhm @ 4.2A, 10V |
vgs(th) (最大值) @ id: | 1.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 880 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQJ418EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 100V 48A PPAK SO-8 |
|
NTR1P02LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.3A SOT23-3 |
|
RFD4N06LSM9ARochester Electronics |
MOSFET N-CH 60V 4A TO252AA |
|
SIHU4N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 4.3A IPAK |
|
PMK35EP,518Nexperia |
MOSFET P-CH 30V 14.9A 8SO |
|
FDB15N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 15A D2PAK |
|
SIHH21N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |
|
APT11F80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 12A TO247 |
|
RM90N30LDRectron USA |
MOSFET N-CHANNEL 30V 90A TO252-2 |
|
IPU50R950CERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC8588DCRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
UPA2755GR-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFX120N30TWickmann / Littelfuse |
MOSFET N-CH 300V 120A PLUS247-3 |