English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ46NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 53A D2PAK |
|
SSM3J351R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -60V -3.5A SOT23 |
|
IRFZ14PBFVishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
2N7000-D26ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
BSD316SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 1.4A SOT363-6 |
|
DMT6009LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.3A/57A TO252 |
|
NTMFS4707NT1GRochester Electronics |
MOSFET N-CH 30V 6.9A 5DFN |
|
SI2301-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT-23 |
|
BF1005SE6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
TN5325N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
IPI60R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A TO262-3 |
|
IRF7402TRPBFRochester Electronics |
MOSFET N-CH 20V 6.8A 8SO |
|
SPD30N08S2-22Rochester Electronics |
MOSFET N-CH 75V 30A TO252-3 |
