RELAY GEN PURPOSE SPDT 6A 24V
MOSFET P-CH 100V 52A TO3P
类型 | 描述 |
---|---|
系列: | PolarP™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 50mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2845 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3P |
包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRF540SPBFVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
![]() |
RQ6E045BNTCRROHM Semiconductor |
MOSFET N-CH 30V 4.5A TSMT |
![]() |
STP120NF10STMicroelectronics |
MOSFET N-CH 100V 110A TO220AB |
![]() |
NTD3055L104GRochester Electronics |
MOSFET N-CH 60V 12A DPAK |
![]() |
IRFL214TRPBFVishay / Siliconix |
MOSFET N-CH 250V 790MA SOT223 |
![]() |
MMSF3P02HDR2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.6A 8SOIC |
![]() |
IPD90N03S4L02ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
![]() |
STW12NK90ZSTMicroelectronics |
MOSFET N-CH 900V 11A TO247-3 |
![]() |
SI7846DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
![]() |
SPI07N65C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
DKI06108Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 47A TO252 |
![]() |
SUD50P08-25L-E3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252 |
![]() |
SIRA02DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |