English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 790mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2Ohm @ 470mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 140 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 3.1W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMSF3P02HDR2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.6A 8SOIC |
|
IPD90N03S4L02ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
STW12NK90ZSTMicroelectronics |
MOSFET N-CH 900V 11A TO247-3 |
|
SI7846DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
|
SPI07N65C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DKI06108Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 47A TO252 |
|
SUD50P08-25L-E3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252 |
|
SIRA02DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
IRFR9220PBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
|
FDP027N08B-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 120A TO220-3 |
|
DMN2300UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.3A 3DFN |
|
SI8823EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 4MICRO FOOT |
|
TSM4NB60CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A ITO220AB |
