类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 61A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 22mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 37.2 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2165 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta), 171W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF40H210Rochester Electronics |
MOSFET N-CH 40V 100A 8PQFN |
|
NTB150N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A D2PAK-3 |
|
FDMS8558SDCRochester Electronics |
MOSFET N-CH 25V 38A/90A 8PQFN |
|
IRFR024NPBFRochester Electronics |
MOSFET N-CH 55V 17A DPAK |
|
IRFIB6N60APBFVishay / Siliconix |
MOSFET N-CH 600V 5.5A TO220-3 |
|
AUIRF1404STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
NTMFS5C468NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
SIHB21N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 21A D2PAK |
|
STP14NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 13.5A TO220FP |
|
AUIRLS4030IR (Infineon Technologies) |
MOSFET N-CH 100V 180A D2PAK |
|
BTS247ZE3062AATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO263-5 |
|
STFW6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A ISOWATT |
|
IXFK140N20PWickmann / Littelfuse |
MOSFET N-CH 200V 140A TO264AA |