English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.2mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 35µA |
| 栅极电荷 (qg) (max) @ vgs: | 43 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3440 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 71W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDZ208PRochester Electronics |
MOSFET P-CH 30V 12.5A 30BGA |
|
BSO051N03MS GIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8DSO |
|
RTE002P02TLROHM Semiconductor |
MOSFET P-CH 20V 200MA EMT3 |
|
SPP08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SPD09P06PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO252-3 |
|
IRFR3410PBFRochester Electronics |
MOSFET N-CH 100V 31A DPAK |
|
IRFH5053TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.3A/46A PQFN |
|
DMT3006LFVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
HUFA76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
UJ3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
|
RM3N700S4Rectron USA |
MOSFET N-CHANNEL 700V 3A SOT223 |
|
SI7135DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
HUF75333P3Rochester Electronics |
MOSFET N-CH 55V 66A TO220-3 |
