English
简体中文
CRYSTAL 26.0000MHZ 6PF SMD
GANFET N-CH 600V 9A 3PQFN
DP11S HOR 20P 20DET 20K M7*7MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 350mOhm @ 5.5A, 8V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.3 nC @ 4.5 V |
| vgs (最大值): | ±18V |
| 输入电容 (ciss) (max) @ vds: | 760 pF @ 480 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 65W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-PQFN (8x8) |
| 包/箱: | 3-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMZB950UPE315Rochester Electronics |
P-CHANNEL MOSFET |
|
TK10A80W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 9.5A TO220SIS |
|
C2M0080120DWolfspeed - a Cree company |
SICFET N-CH 1200V 36A TO247-3 |
|
PMT200EPEA115Rochester Electronics |
P-CHANNEL MOSFET |
|
FQB3P20TMRochester Electronics |
MOSFET P-CH 200V 2.8A D2PAK |
|
XP152A11E5MR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 700MA SOT23 |
|
STL38N65M5STMicroelectronics |
MOSFET N-CH 650V PWRFLAT HV |
|
FQD5N20LTFRochester Electronics |
MOSFET N-CH 200V 3.8A DPAK |
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |
|
SUG80050E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 100A TO247AC |