类型 | 描述 |
---|---|
系列: | SuperFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 3.08 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 208W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN3021LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.8A 6UDFN |
|
DMN3027LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.3A PWRDI3333-8 |
|
SI2318CDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 5.6A SOT23-3 |
|
IPP80N04S4L04AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3-1 |
|
BSP315PL6327HTSA1Rochester Electronics |
MOSFET P-CH 60V 1.17A SOT223-4 |
|
SI7190DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 18.4A PPAK SO-8 |
|
SIHH11N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 11A PPAK 8 X 8 |
|
RZR040P01TLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
|
AON6558Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 25A/28A 8DFN |
|
IRFU320PBFVishay / Siliconix |
MOSFET N-CH 400V 3.1A TO251AA |
|
DMP3056LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.3A SOT-26 |
|
APT10026JLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 30A ISOTOP |
|
IXTA120N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 120A TO263 |