English
简体中文
MOSFET N-CH 40V 79.8A/558A 8DFNW
R1000 SAFETY TEST LEAD SET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 79.8A (Ta), 558A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 0.45mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 251 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 16500 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFNW (8.3x8.4) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFA16N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 16A TO263 |
|
BUK9M23-80EXNexperia |
MOSFET N-CH 80V 37A LFPAK33 |
|
NTTFS4C06NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/67A 8WDFN |
|
BSC030N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON |
|
IPD090N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 40A TO252-3 |
|
IPT012N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 240A 8HSOF |
|
FQD30N06TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22.7A TO252 |
|
IPB022N04LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB14AN06LA0Rochester Electronics |
MOSFET N-CH 60V 10A/67A TO263AB |
|
IPB100P03P3L-04Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
AUIRFB8409IR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
IMW65R107M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
TK20A60U(Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO220SIS |