CAP CER 1500PF 100V C0G/NP0 2220
MEMS OSC XO 24.0000MHZ LVCMOS LV
MOSFET P-CH 40V 3.1A/4.4A SOT23
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 3.1A (Ta), 4.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 77mOhm @ 3.1A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 595 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta), 2.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TSM170N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 38A TO252 |
|
FQPF70N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 35A TO220F |
|
SI7141DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8 |
|
NVMFS4C03NWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 31.4A/143A 5DFN |
|
FDD6030LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A/50A DPAK |
|
SSM3K329R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 3.5A 2-3Z1A |
|
IXTA52P10P-TRLWickmann / Littelfuse |
MOSFET P-CH 100V 52A TO263 |
|
MCH3477-TL-HRochester Electronics |
MOSFET N-CH 20V 4.5A SC70 |
|
IPW60R299CPFKSA1Rochester Electronics |
MOSFET N-CH 600V 11A TO247-3 |
|
SPW07N60CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4925NT3GRochester Electronics |
MOSFET N-CH 30V 9.7A/48A 5DFN |
|
AOW292Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 105A TO262 |
|
SIS822DNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |