MOSFET N-CH 650V 7A IPAK
DIODE ZENER 24V 500MW SOD123
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 48 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 820 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 78W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | IPAK (TO-251) |
包/箱: | TO-251-3 Long Leads, IPak, TO-251AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQN1N60CBURochester Electronics |
MOSFET N-CH 600V 300MA TO92-3 |
|
SQ7415AEN-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 16A 1212-8 |
|
IXTK120N25PWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO264 |
|
IRF1404ZPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO220AB |
|
SIHG080N60E-GE3Vishay / Siliconix |
E SERIES POWER MOSFET TO-247AC, |
|
IXTQ30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO3P |
|
IPI65R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO262-3 |
|
RS1E300GNTBROHM Semiconductor |
MOSFET N-CH 30V 30A 8-HSOP |
|
IRFR3411TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 32A DPAK |
|
CSD16340Q3TTexas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
IMW65R048M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
MMFTN123Diotec Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IPP65R280E6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO220-3 |