English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | 39A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMFTN123Diotec Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IPP65R280E6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO220-3 |
|
MMBF2201NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SC70-3 |
|
PSMN130-200D,118Nexperia |
MOSFET N-CH 200V 20A DPAK |
|
TK14N65W5,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO247 |
|
IXFK200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A TO264AA |
|
FDMA530PZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
STF7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A TO220FP |
|
SIR165DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
ZVN3320FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 60MA SOT23-3 |
|
IRF640NSTRRPBFRochester Electronics |
IRF640 - HEXFET POWER MOSFET |
|
SQ4840EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 20.7A 8SOIC |
|
STB11NM80T4STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
