类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 2.6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 51mOhm @ 2A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 10.7 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 814 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 370mW (Ta) |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
供应商设备包: | ULGA004-W-1010-RA01 |
包/箱: | 4-XFLGA, CSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFA20N85XHVWickmann / Littelfuse |
MOSFET N-CH 850V 20A TO263 |
|
IRF234Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BUK7E3R5-60E,127Nexperia |
MOSFET N-CH 60V 120A I2PAK |
|
HUF75637P3Rochester Electronics |
MOSFET N-CH 100V 44A TO220-3 |
|
SI4488DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 3.5A 8SO |
|
IPB04N03LATIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
SSM3K15ACTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3C |
|
IRLR3802TRPBFRochester Electronics |
IRLR3802 - HEXFET POWER MOSFET |
|
SQ2389ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
FDS6900SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISS73DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.4A/16.2A PPAK |
|
STP4LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 3A TO220 |
|
NTB6413ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK |