English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench®, SyncFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.3mOhm @ 19A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2280 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 41W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0366DSP-00#J0Rochester Electronics |
MOSFET N-CH 30V 11A 8SOP |
|
BSZ024N04LS6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 24A/40A TSDSON |
|
IPI90R500C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 11A TO262-3 |
|
NTD4906N-1GRochester Electronics |
MOSFET N-CH 30V 10.3A/54A IPAK |
|
FQPF630Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.3A TO220F |
|
IPS65R950C6AKMA1Rochester Electronics |
POWER BIPOLAR TRANSISTOR |
|
NTB23N03RRochester Electronics |
MOSFET N-CH 25V 23A D2PAK |
|
NTMFD4952NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.8A 8DFN DL |
|
APT30M40JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 70A ISOTOP |
|
IPS60R460CEAKMA1Rochester Electronics |
IPS60R460 - 600V COOLMOS N-CHANN |
|
BFL4004Rochester Electronics |
MOSFET N-CH 800V 4.3A TO220FI |
|
APT12060LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |
|
PMV37EN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
